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| AF4409P P-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Product Summary VDS (V) -20 rDS(on) (m) 20@VGS=-4.5V 29@VGS=-2.5V ID (A) 10 8.4 Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D Description Source Gate Drain SOP-8 Ordering information AX Feature F :MOSFET PN 4409P X X X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Jul 16, 2004 1/3 AF4409P P-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings (TA=25C unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TA=25C TA=70C Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction) (Note 1) TA=25C Power Dissipation (Note 1) TA=70C Operating Junction and Storage Temperature Range Rating -30 12 10 8.2 50 -2.1 3.1 2 -55 to 150 Units V V A A A W C Thermal Resistance Ratings Symbol RJC RJA Parameter Maximum Junction-to-Case (Note 1) Maximum Junction-to-Ambient (Note 1) t < 5 sec t < 10 sec Maximum 25 40 Units C/W C/W Note 1: surface Mounted on 1"x 1" FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25C unless otherwise noted) Symbol Static V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) Parameter Drain-Source breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (Note 3) Drain-Source On-Resistance (Note 3) Test Conditions VGS=0V, ID=-250uA VDS= VGS, ID=-250uA VDS=0V, VGS=12V VDS=-20V, VGS=0V VDS=-20V, VGS=0V, TJ=55C VDS=-5V, VGS=-10V VGS=-4.5V, ID=-10A VGS=-2.5V, ID=-8.4A VGS=-4.5V, ID=-10A, TJ=55C VGS=-15V, ID=-9.5A IS=-2.1A, VGS=0V VDS=-15V, VGS=-5V, ID=-10A Min. -30 -1 -50 Limits Typ. -1.6 16.5 25 18 31 -0.7 15 5.8 12 15 12 62 46 Max. -3 100 -1 -5 20 29 23 -1.2 26 26 21 108 71 S V Unit V V nA uA A m gfs Forward Tranconductance (Note 3) VSD Diode Forward Voltage Dynamic (Note 4) Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Switching td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall-Time nC VDD=-15V, RL=15, ID=-1A, VGEN=-10V, RG=6, nS Note 3: Pulse test: PW < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing. Anachip Corp. www.anachip.com.tw 2/3 Rev. 1.0 Jul 16, 2004 AF4409P P-Channel 30-V (D-S) MOSFET Marking Information SOP-8L ( Top View ) 8 Logo Part Number 4409P AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SOP-8L E H L VIEW "A" D 7 (4X) 0.015x45 7 (4X) A2 A A1 e B y C VIEW "A" Symbol A A1 A2 B C D E e H L y Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 0O 8O Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 0O 8O Anachip Corp. www.anachip.com.tw 3/3 Rev. 1.0 Jul 16, 2004 |
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